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| 型号 | NDC651N |
| 厂商 | Fairchild Semiconductor |
| 描述 | MOSFET N-CH 30V 3.2A SSOT6 |
| NDC651N PDF |  |
| 代理商 | NDC651N |
| 产品变化通告 | Mold Compound Change 08/April/2008 |
| 标准包装 | 1 |
| FET 型 | MOSFET N 通道，金属氧化物 |
| FET 特点 | 逻辑电平门 |
| 漏极至源极电压(Vdss) | 30V |
| 电流 - 连续漏极(Id) @ 25° C | 3.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 60 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大） | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds | 290pF @ 15V |
| 功率 - 最大 | 800mW |
| 安装类型 | 表面贴装 |
| 封装/外壳 | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装 | 6-SSOT |
| 包装 | 标准包装 |
| 其它名称 | NDC651NDKR |
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